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IDT5V41064
1 OUTPUT PCIE GEN1/2 SYNTHESIZER
IDT 1 OUTPUT PCIE GEN1/2 SYNTHESIZER
7
IDT5V41064
REV G 112111
Absolute Maximum Ratings
Stresses above the ratings listed below can cause permanent damage to the IDT5V41064. These ratings are stress
ratings only. Functional operation of the device at these or any other conditions above those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for
extended periods can affect product reliability. Electrical parameters are guaranteed only over the recommended
operating temperature range.
DC Electrical Characteristics
Unless stated otherwise, VDD = 3.3 V ±5%, Ambient Temperature -40 to +85
° C
1 Single edge is monotonic when transitioning through region.
2 Inputs with pull-ups/-downs are not included.
Item
Rating
Supply Voltage, VDD, VDDA
5.5 V
All Inputs and Outputs
-0.5 V to VDD+0.5 V
Ambient Operating Temperature (commercial)
0 to +70
° C
Ambient Operating Temperature (industrial)
-40 to +85
° C
Storage Temperature
-65 to +150
° C
Junction Temperature
125
° C
Soldering Temperature
260
° C
ESD Protection (Input)
2000 V min. (HBM)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Supply Voltage
V
3.135
3.465
Input High Voltage1
VIH
2.2
VDD +0.3
V
Input Low Voltage1
VIL
VSS-0.3
0.8
V
Input Leakage Current2
IIL
0 < Vin < VDD
-5
5
μA
Operating Supply Current
IDD
2 pF load
70
mA
Input Capacitance
CIN
Input pin capacitance
7
pF
Output Capacitance
COUT
Output pin capacitance
6
pF
Pin Inductance
LPIN
5nH
Output Resistance
Rout
CLK outputs
3.0
k
Ω
Pull-up Resistor
RPUP
SS1
100
k
Ω
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